G30N02T Goford Semiconductor

Symbol Micros: TG30N02T

392130

TG30N02T

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Datasheet

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N20V,RD(MAX)<13M@4.5V,VTH0.5V~1. Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	13mOhm
Max. drain current:	30A
Max. power loss:	40W
Case:	TO220
Manufacturer:	GOFORD
Max. drain-source voltage:	20V
Max. gate-source Voltage:	12V

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• Parameters

Open channel resistance:	13mOhm
Max. drain current:	30A
Max. power loss:	40W
Case:	TO220
Manufacturer:	GOFORD
Max. drain-source voltage:	20V
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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