G30N03D3 Goford Semiconductor

Symbol Micros: TG30N03D3

392131

TG30N03D3

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Datasheet

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N30V,RD(MAX)<7M@10V,RD(MAX)<12M@ Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	12mOhm
Max. drain current:	42A
Max. power loss:	25W
Case:	DFN3x3-8L
Manufacturer:	GOFORD
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	12mOhm
Max. drain current:	42A
Max. power loss:	25W
Case:	DFN3x3-8L
Manufacturer:	GOFORD
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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