G60N04K Goford Semiconductor

Symbol Micros: TG60N04K
Contractor Symbol:
Case :  
N40V,RD(MAX)<7M@10V,RD(MAX)<12M@ Transistors - FETs, MOSFETs - Single
Parameters
Open channel resistance: 9mOhm
Max. drain current: 60A
Max. power loss: 65W
Case: TO-252
Manufacturer: GOFORD
Max. drain-source voltage: 40V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 9mOhm
Max. drain current: 60A
Max. power loss: 65W
Case: TO-252
Manufacturer: GOFORD
Max. drain-source voltage: 40V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD