G60N10T Goford Semiconductor

Symbol Micros: TG60N10T

392146

TG60N10T

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Case : TO-220

Datasheet

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N100V,RD(MAX)<25M@10V,RD(MAX)<30 Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	19mOhm
Max. drain current:	60A
Max. power loss:	132W
Case:	TO220
Manufacturer:	GOFORD
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	19mOhm
Max. drain current:	60A
Max. power loss:	132W
Case:	TO220
Manufacturer:	GOFORD
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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