G65P06F Goford Semiconductor

Symbol Micros: TG65P06F

392148

TG65P06F

Contractor Symbol:

Case : TO-220F

Datasheet

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P-CH, -60V, 65A, RD(MAX)<18M@-10 Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	18mOhm
Max. drain current:	65A
Max. power loss:	39W
Case:	TO220F
Manufacturer:	GOFORD
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	18mOhm
Max. drain current:	65A
Max. power loss:	39W
Case:	TO220F
Manufacturer:	GOFORD
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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