G65P06T Goford Semiconductor

Symbol Micros: TG65P06T

392150

TG65P06T

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Datasheet

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P-60V,RD(MAX)<18M@-10V,VTH-2.0V~ Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	18mOhm
Max. drain current:	65A
Max. power loss:	130W
Case:	TO220
Manufacturer:	GOFORD
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	18mOhm
Max. drain current:	65A
Max. power loss:	130W
Case:	TO220
Manufacturer:	GOFORD
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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