G6P06 Goford Semiconductor

Symbol Micros: TG6P06

392151

TG6P06

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Datasheet

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P60V,RD(MAX)<96M@-10V,RD(MAX)<14 Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	90mOhm
Max. drain current:	3,5A
Max. power loss:	1,14W
Case:	SOP08
Manufacturer:	GOFORD
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	90mOhm
Max. drain current:	3,5A
Max. power loss:	1,14W
Case:	SOP08
Manufacturer:	GOFORD
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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