G86N06K Goford Semiconductor

Symbol Micros: TG86N06K

392157

TG86N06K

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Datasheet

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N60V,RD(MAX)<8.4M@10V,VTH2V~4V , Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	8mOhm
Max. drain current:	80A
Max. power loss:	110W
Case:	TO-252
Manufacturer:	GOFORD
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	8mOhm
Max. drain current:	80A
Max. power loss:	110W
Case:	TO-252
Manufacturer:	GOFORD
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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