GAN063-650WSAQ

Symbol Micros: TGAN063-650WSAQ
Contractor Symbol:
Case : TO247
Trans MOSFET N-CH GaN 650V 34.5A 3-Pin(3+Tab) TO-247
Parameters
Open channel resistance: 120mOhm
Max. drain current: 34,5A
Max. power loss: 143W
Case: TO247
Manufacturer: NXP
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Manufacturer:: NXP Manufacturer part number: GAN063-650WSAQ RoHS Case style: TO247 Datasheet
In stock:
5 pcs.
Quantity of pcs. 1+ 5+ 10+ 20+ 40+
Net price (EUR) 17,1784 14,2145 13,4730 12,9331 12,5391
Add to comparison tool
Packaging:
5
Open channel resistance: 120mOhm
Max. drain current: 34,5A
Max. power loss: 143W
Case: TO247
Manufacturer: NXP
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT