GAN063-650WSAQ

Symbol Micros: TGAN063-650WSAQ

297824

TGAN063-650WSAQ

Contractor Symbol:

Case : TO247

Datasheet

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Trans MOSFET N-CH GaN 650V 34.5A 3-Pin(3+Tab) TO-247

Parameters

Open channel resistance:	120mOhm
Max. drain current:	34,5A
Max. power loss:	143W
Case:	TO247
Manufacturer:	NXP
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: NXP Manufacturer part number: GAN063-650WSAQ RoHS Case style: TO247 Datasheet

In stock:

5 pcs.

Quantity of pcs.	1+	5+	10+	20+	40+
Net price (EUR)	17,5029	14,4830	13,7275	13,1773	12,7760

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Packaging:
5 Quantity (multiple: 1)

- +

Manufacturer:: Nexperia Manufacturer part number: GAN063-650WSAQ Case style: TO247  

External warehouse:

300 pcs.

Quantity of pcs.	30+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	12,7760

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Packaging:
30

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	120mOhm
Max. drain current:	34,5A
Max. power loss:	143W
Case:	TO247
Manufacturer:	NXP
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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