GAN063-650WSAQ
Symbol Micros:
TGAN063-650WSAQ
Case : TO247
Trans MOSFET N-CH GaN 650V 34.5A 3-Pin(3+Tab) TO-247
Parameters
Open channel resistance: | 120mOhm |
Max. drain current: | 34,5A |
Max. power loss: | 143W |
Case: | TO247 |
Manufacturer: | NXP |
Max. drain-source voltage: | 650V |
Transistor type: | N-MOSFET |
Manufacturer:: NXP
Manufacturer part number: GAN063-650WSAQ RoHS
Case style: TO247
Datasheet
In stock:
5 pcs.
Quantity of pcs. | 1+ | 5+ | 10+ | 20+ | 40+ |
---|---|---|---|---|---|
Net price (EUR) | 17,4823 | 14,4660 | 13,7113 | 13,1618 | 12,7609 |
Manufacturer:: Nexperia
Manufacturer part number: GAN063-650WSAQ
Case style: TO247
External warehouse:
260 pcs.
Quantity of pcs. | 30+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 12,7609 |
Manufacturer:: Nexperia
Manufacturer part number: GAN063-650WSAQ
Case style: TO247
External warehouse:
300 pcs.
Quantity of pcs. | 30+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 12,7609 |
Open channel resistance: | 120mOhm |
Max. drain current: | 34,5A |
Max. power loss: | 143W |
Case: | TO247 |
Manufacturer: | NXP |
Max. drain-source voltage: | 650V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 175°C |
Mounting: | THT |
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