GC11N65F Goford Semiconductor

Symbol Micros: TGC11N65F

392158

TGC11N65F

Contractor Symbol:

Case :  

Datasheet

Add to favourites

N650V,RD(MAX)<360M@10V,VTH2.5V~4 Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	360mOhm
Max. drain current:	11A
Max. power loss:	31,3W
Case:	TO-220F
Manufacturer:	GOFORD
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

         

 

Add inquiry (RFQ)

Item available on request

• Parameters

Open channel resistance:	360mOhm
Max. drain current:	11A
Max. power loss:	31,3W
Case:	TO-220F
Manufacturer:	GOFORD
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.