GT025N06D5 Goford Semiconductor

Symbol Micros: TGT025N06D5

392178

TGT025N06D5

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Datasheet

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N60V,RD(MAX)<2.7M@10V,RD(MAX)<3. Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	3,4mOhm
Max. drain current:	170A
Max. power loss:	125W
Case:	DFN08(5x6)
Manufacturer:	GOFORD
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	3,4mOhm
Max. drain current:	170A
Max. power loss:	125W
Case:	DFN08(5x6)
Manufacturer:	GOFORD
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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