GT035N06T Goford Semiconductor

Symbol Micros: TGT035N06T
Contractor Symbol:
Case :  
N-CH, 60V,170A, RD(MAX)<3.5M@10V Transistors - FETs, MOSFETs - Single
Parameters
Open channel resistance: 4,5mOhm
Max. drain current: 170A
Max. power loss: 215W
Case: TO220
Manufacturer: GOFORD
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 4,5mOhm
Max. drain current: 170A
Max. power loss: 215W
Case: TO220
Manufacturer: GOFORD
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT