GT035N06T Goford Semiconductor
Symbol Micros:
TGT035N06T
Case :
N-CH, 60V,170A, RD(MAX)<3.5M@10V Transistors - FETs, MOSFETs - Single
Parameters
| Open channel resistance: | 4,5mOhm |
| Max. drain current: | 170A |
| Max. power loss: | 215W |
| Case: | TO220 |
| Manufacturer: | GOFORD |
| Max. drain-source voltage: | 60V |
| Transistor type: | N-MOSFET |
| Open channel resistance: | 4,5mOhm |
| Max. drain current: | 170A |
| Max. power loss: | 215W |
| Case: | TO220 |
| Manufacturer: | GOFORD |
| Max. drain-source voltage: | 60V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | THT |
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