GT045N10M

Symbol Micros: TGT045N10M GO

397119

TGT045N10M GO

Contractor Symbol:

Case : TO263

Datasheet

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Transistor MOSFET; TO-263; N-Channel; NO ESD; 100V; 120A; 180W; 3V; 3.8mΩ;

Parameters

Open channel resistance:	4,5mOhm
Max. drain current:	120A
Max. power loss:	180W
Case:	TO263
Manufacturer:	GOFORD
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	4,5mOhm
Max. drain current:	120A
Max. power loss:	180W
Case:	TO263
Manufacturer:	GOFORD
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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