GT060N04D3 Goford Semiconductor
Symbol Micros:
TGT060N04D3
Case :
N40V,RD(MAX)<6.5M@10V,RD(MAX)<10 Transistors - FETs, MOSFETs - Single
Parameters
| Open channel resistance: | 11mOhm |
| Max. drain current: | 56A |
| Max. power loss: | 60W |
| Case: | DFN08(3x3) |
| Manufacturer: | GOFORD |
| Max. drain-source voltage: | 40V |
| Transistor type: | N-MOSFET |
| Open channel resistance: | 11mOhm |
| Max. drain current: | 56A |
| Max. power loss: | 60W |
| Case: | DFN08(3x3) |
| Manufacturer: | GOFORD |
| Max. drain-source voltage: | 40V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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