GT060N04D3 Goford Semiconductor

Symbol Micros: TGT060N04D3
Contractor Symbol:
Case :  
N40V,RD(MAX)<6.5M@10V,RD(MAX)<10 Transistors - FETs, MOSFETs - Single
Parameters
Open channel resistance: 11mOhm
Max. drain current: 56A
Max. power loss: 60W
Case: DFN08(3x3)
Manufacturer: GOFORD
Max. drain-source voltage: 40V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 11mOhm
Max. drain current: 56A
Max. power loss: 60W
Case: DFN08(3x3)
Manufacturer: GOFORD
Max. drain-source voltage: 40V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD