GT095N10K Goford Semiconductor

Symbol Micros: TGT095N10K

392183

TGT095N10K

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N100V, RD(MAX)<10.5M@10V,RD(MAX) Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	15mOhm
Max. drain current:	55A
Max. power loss:	74W
Case:	TO-252
Manufacturer:	GOFORD
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	15mOhm
Max. drain current:	55A
Max. power loss:	74W
Case:	TO-252
Manufacturer:	GOFORD
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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