GT100N12T Goford Semiconductor

Symbol Micros: TGT100N12T

392187

TGT100N12T

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N120V,RD(MAX)<10M@10V,VTH2.5V~3. Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	10mOhm
Max. drain current:	70A
Max. power loss:	100W
Case:	TO220
Manufacturer:	GOFORD
Max. drain-source voltage:	120V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	10mOhm
Max. drain current:	70A
Max. power loss:	100W
Case:	TO220
Manufacturer:	GOFORD
Max. drain-source voltage:	120V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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