GT105N10F Goford Semiconductor

Symbol Micros: TGT105N10F

392188

TGT105N10F

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Datasheet

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N100V,RD(MAX)<10.5M@10V,RD(MAX)< Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	15mOhm
Max. drain current:	48A
Max. power loss:	50W
Case:	TO-220F
Manufacturer:	GOFORD
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	15mOhm
Max. drain current:	48A
Max. power loss:	50W
Case:	TO-220F
Manufacturer:	GOFORD
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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