GT110N06S Goford Semiconductor

Symbol Micros: TGT110N06S

392190

TGT110N06S

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Datasheet

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N60V,RD(MAX)<15M@-4.5V,RD(MAX)<1 Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	14mOhm
Max. drain current:	14A
Max. power loss:	3W
Case:	SOP08
Manufacturer:	GOFORD
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	14mOhm
Max. drain current:	14A
Max. power loss:	3W
Case:	SOP08
Manufacturer:	GOFORD
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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