GT50JR22(STA1,E,S) 

Symbol Micros: TGT50JR22

144621

TGT50JR22

Contractor Symbol:

Case : TO3PFM

Datasheet

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Trans IGBT Chip N-CH 600V 50A 230000mW 3-Pin(3+Tab) TO-3PN Magazine;

Parameters

Max. dissipated power:	230W
Max collector current (impulse):	100A
Max. collector current:	50A
Forvard volatge [Vgeth]:	4,5V ~ 7,5V
Case:	TO3PFM
Manufacturer:	Toshiba
Operating temperature (range):	-55°C ~ 175°C

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• Parameters

Max. dissipated power:	230W
Max collector current (impulse):	100A
Max. collector current:	50A
Forvard volatge [Vgeth]:	4,5V ~ 7,5V
Case:	TO3PFM
Manufacturer:	Toshiba
Operating temperature (range):	-55°C ~ 175°C
Collector-emitter voltage:	600V
Gate-emitter voltage:	25V
Mounting:	THT

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