GT650N15K Goford Semiconductor

Symbol Micros: TGT650N15K

392194

TGT650N15K

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N150V,RD(MAX)<65M@10V,VTH2.5V~4. Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	65mOhm
Max. drain current:	20A
Max. power loss:	68W
Case:	TO-252
Manufacturer:	GOFORD
Max. drain-source voltage:	150V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	65mOhm
Max. drain current:	20A
Max. power loss:	68W
Case:	TO-252
Manufacturer:	GOFORD
Max. drain-source voltage:	150V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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