HGT1S10N120BNS

Symbol Micros: THGT1S10n120bns

109357

THGT1S10n120bns

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

Technical drawing Add to favourites

35A; 1200V; 298W; IGBT

Parameters

Gate charge:	150nC
Max. dissipated power:	298W
Max collector current (impulse):	80A
Max. collector current:	35A
Forvard volatge [Vgeth]:	6,0V ~ 6,8V
Case:	TO263 (D2PAK)
Manufacturer:	ON SEMICONDUCTOR

All parameters

         

 

Add inquiry (RFQ)

Item available on request

• Parameters

Gate charge:	150nC
Max. dissipated power:	298W
Max collector current (impulse):	80A
Max. collector current:	35A
Forvard volatge [Vgeth]:	6,0V ~ 6,8V
Case:	TO263 (D2PAK)
Manufacturer:	ON SEMICONDUCTOR
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	1200V
Gate-emitter voltage:	20V
Mounting:	THT

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.