HGT1S10N120BNS

Symbol Micros: THGT1S10n120bns

109357

THGT1S10n120bns

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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35A; 1200V; 298W; IGBT

Parameters

Gate charge:	150nC
Max. dissipated power:	298W
Max collector current (impulse):	80A
Max. collector current:	35A
Forvard volatge [Vgeth]:	6,0V ~ 6,8V
Case:	TO263 (D2PAK)
Manufacturer:	ON SEMICONDUCTOR

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: HGT1S10N120BNST Case style: TO263 (D2PAK)  

External warehouse:

7200 pcs.

Quantity of pcs.	800+ (Please wait for the order confirmation)
Net price (EUR)	2,1473

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Packaging:
800

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Gate charge:	150nC
Max. dissipated power:	298W
Max collector current (impulse):	80A
Max. collector current:	35A
Forvard volatge [Vgeth]:	6,0V ~ 6,8V
Case:	TO263 (D2PAK)
Manufacturer:	ON SEMICONDUCTOR
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	1200V
Gate-emitter voltage:	20V
Mounting:	THT

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