HGTG10N120BND

Symbol Micros: THGTG10n120bnd

109354

THGTG10n120bnd

Contractor Symbol:

Case : TO247

Datasheet

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35A; 1200V; 298W; IGBT w/ Diode

Parameters

Gate charge:	150nC
Max. dissipated power:	298W
Max collector current (impulse):	80A
Max. collector current:	35A
Forvard volatge [Vgeth]:	6,0V ~ 6,8V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR

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• Parameters

Gate charge:	150nC
Max. dissipated power:	298W
Max collector current (impulse):	80A
Max. collector current:	35A
Forvard volatge [Vgeth]:	6,0V ~ 6,8V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	1200V
Gate-emitter voltage:	20V
Mounting:	THT

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