HGTG11N120CND

Symbol Micros: THGTG11n120cnd

105791

THGTG11n120cnd

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 1200V; 20V; 43A; 80A; 298W; 6,0~6,8V; 150nC; -55°C~150°C;

Parameters

Gate charge:	150nC
Max. dissipated power:	298W
Max collector current (impulse):	80A
Max. collector current:	43A
Forvard volatge [Vgeth]:	6,0V ~ 6,8V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: HGTG11N120CND RoHS Case style: TO247  

In stock:

35 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	4,0923	3,6363	3,3613	3,2250	3,1474

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Packaging:
30 Quantity (multiple: 1)

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• Parameters

Gate charge:	150nC
Max. dissipated power:	298W
Max collector current (impulse):	80A
Max. collector current:	43A
Forvard volatge [Vgeth]:	6,0V ~ 6,8V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	1200V
Gate-emitter voltage:	20V
Mounting:	THT

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