HGTG12N60A4D

Symbol Micros: THGTG12n60a4d

20751

THGTG12n60a4d

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 600V; 20V; 54A; 96A; 167W; 5.6V; 120nC; -55°C~150°C;

Parameters

Gate charge:	120nC
Max. dissipated power:	167W
Max collector current (impulse):	96A
Max. collector current:	54A
Forvard volatge [Vgeth]:	5,6V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR

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• Parameters

Gate charge:	120nC
Max. dissipated power:	167W
Max collector current (impulse):	96A
Max. collector current:	54A
Forvard volatge [Vgeth]:	5,6V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	600V
Gate-emitter voltage:	20V
Mounting:	THT

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