HGTG20N60A4

Symbol Micros: THGTG20N60A4
Contractor Symbol:
Case : TO247
70A; 600V; 290W; IGBT
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Parameters
Gate charge: 210nC
Max. dissipated power: 290W
Max. collector current: 70A
Max collector current (impulse): 280A
Forvard volatge [Vgeth]: 4,5V ~ 7,0V
Case: TO247
Manufacturer: ON SEMICONDUCTOR
         
 
Item available on request
Gate charge: 210nC
Max. dissipated power: 290W
Max. collector current: 70A
Max collector current (impulse): 280A
Forvard volatge [Vgeth]: 4,5V ~ 7,0V
Case: TO247
Manufacturer: ON SEMICONDUCTOR
Collector-emitter voltage: 600V
Operating temperature (range): -55°C ~ 150°C
Gate-emitter voltage: 20V
Mounting: THT