HGTG30N60B3D
Symbol Micros:
THGTG30n60b3d
Case : TO247
60A; 600V; 208W; IGBT w/ Diode
Parameters
| Gate charge: | 250nC |
| Max. dissipated power: | 208W |
| Max. collector current: | 60A |
| Max collector current (impulse): | 220A |
| Forvard volatge [Vgeth]: | 4,2V ~ 6,0V |
| Case: | TO247 |
| Manufacturer: | ON SEMICONDUCTOR |
| Gate charge: | 250nC |
| Max. dissipated power: | 208W |
| Max. collector current: | 60A |
| Max collector current (impulse): | 220A |
| Forvard volatge [Vgeth]: | 4,2V ~ 6,0V |
| Case: | TO247 |
| Manufacturer: | ON SEMICONDUCTOR |
| Collector-emitter voltage: | 600V |
| Operating temperature (range): | -55°C ~ 150°C |
| Gate-emitter voltage: | 20V |
| Mounting: | THT |
Add Symbol
Cancel
All Contractor Symbols