HGTG30N60B3D

Symbol Micros: THGTG30n60b3d

78828

THGTG30n60b3d

Contractor Symbol:

Case : TO247

Datasheet

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60A; 600V; 208W; IGBT w/ Diode

Parameters

Gate charge:	250nC
Max. dissipated power:	208W
Max collector current (impulse):	220A
Max. collector current:	60A
Forvard volatge [Vgeth]:	4,2V ~ 6,0V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR

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• Parameters

Gate charge:	250nC
Max. dissipated power:	208W
Max collector current (impulse):	220A
Max. collector current:	60A
Forvard volatge [Vgeth]:	4,2V ~ 6,0V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	600V
Gate-emitter voltage:	20V
Mounting:	THT

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