HGTG40N60A4

Symbol Micros: THGTG40n60a4

144345

THGTG40n60a4

Contractor Symbol:

Case : TO247

Datasheet

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Trans IGBT Chip N-CH 600V 75A 625000mW 3-Pin(3+Tab) TO-247

Parameters

Gate charge:	520nC
Max. dissipated power:	625W
Max collector current (impulse):	300A
Max. collector current:	75A
Forvard volatge [Vgeth]:	4,5V ~ 7,0V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: HGTG40N60A4 RoHS Case style: TO247  

In stock:

17 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	10,7421	9,2307	8,2881	7,7968	7,5124

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Packaging:
30 Quantity (multiple: 1)

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• Parameters

Gate charge:	520nC
Max. dissipated power:	625W
Max collector current (impulse):	300A
Max. collector current:	75A
Forvard volatge [Vgeth]:	4,5V ~ 7,0V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	600V
Gate-emitter voltage:	20V
Mounting:	THT

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