HGTP12N60A4D

Symbol Micros: THGTP12n60a4d

52597

THGTP12n60a4d

Contractor Symbol:

Case : TO220

Datasheet

Technical drawing Add to favourites

54A; 600V; 167W; IGBT w/ Diode

Parameters

Gate charge:	120nC
Max. dissipated power:	167W
Max collector current (impulse):	96A
Max. collector current:	54A
Forvard volatge [Vgeth]:	5,6V
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR

All parameters

         

 

Add inquiry (RFQ)

Item available on request

• Parameters

Gate charge:	120nC
Max. dissipated power:	167W
Max collector current (impulse):	96A
Max. collector current:	54A
Forvard volatge [Vgeth]:	5,6V
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	600V
Gate-emitter voltage:	20V
Mounting:	THT

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.