HGTP20N60A4

Symbol Micros: THGTP20n60a4

Case : TO220

Transistor IGBT ; 600V; 20V; 70A; 280A; 290W; 4,5V~7,0V; 210nC; -55°C~150°C;

Parameters

Gate charge:	210nC
Max. dissipated power:	290W
Max collector current (impulse):	280A
Max. collector current:	70A
Forvard volatge [Vgeth]:	4,5V ~ 7,0V
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR

Manufacturer:: Fairchild Manufacturer part number: HGTP20N60A4 RoHS Case style: TO220

In stock:

47 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	2,8935	2,5010	2,2683	2,1226	2,0661

Gate charge:	210nC
Max. dissipated power:	290W
Max collector current (impulse):	280A
Max. collector current:	70A
Forvard volatge [Vgeth]:	4,5V ~ 7,0V
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	600V
Gate-emitter voltage:	20V
Mounting:	THT