HGTP20N60A4

Symbol Micros: THGTP20n60a4
Contractor Symbol:
Case : TO220
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70A; 600V; 290W; IGBT
Parameters
Gate charge: 210nC
Max. dissipated power: 290W
Max. collector current: 70A
Max collector current (impulse): 280A
Forvard volatge [Vgeth]: 4,5V ~ 7,0V
Case: TO220
Manufacturer: ON SEMICONDUCTOR
Manufacturer:: Fairchild Manufacturer part number: HGTP20N60A4 RoHS Case style: TO220  
In stock:
54 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 2,8659 2,3844 2,0996 1,9191 1,8496
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Packaging:
50
Gate charge: 210nC
Max. dissipated power: 290W
Max. collector current: 70A
Max collector current (impulse): 280A
Forvard volatge [Vgeth]: 4,5V ~ 7,0V
Case: TO220
Manufacturer: ON SEMICONDUCTOR
Collector-emitter voltage: 600V
Operating temperature (range): -55°C ~ 150°C
Gate-emitter voltage: 20V
Mounting: THT

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