HUF75339P3

Symbol Micros: THUF75339p

104612

THUF75339p

Contractor Symbol:

Case : TO220

Datasheet

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Transistor N-Channel MOSFET; 55V; 55V; 20V; 12mOhm; 75A; 200W; -55°C ~ 175°C;

Parameters

Open channel resistance:	12mOhm
Max. drain current:	75A
Max. power loss:	200W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	55V
Max. drain-gate voltage:	55V

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• Parameters

Open channel resistance:	12mOhm
Max. drain current:	75A
Max. power loss:	200W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	55V
Max. drain-gate voltage:	55V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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