HUF75545P3

Symbol Micros: THUF75545p3

15944

THUF75545p3

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET 75A 80V

Parameters

Open channel resistance:	10mOhm
Max. drain current:	75A
Max. power loss:	270W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	80V
Max. drain-gate voltage:	80V

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• Parameters

Open channel resistance:	10mOhm
Max. drain current:	75A
Max. power loss:	270W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	80V
Max. drain-gate voltage:	80V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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