HUF75639P3

Symbol Micros: THUF75639p3

109442

THUF75639p3

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Case : TO220

Datasheet

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Trans MOSFET N-CH Si 100V 56A

Parameters

Open channel resistance:	25mOhm
Max. drain current:	56A
Max. power loss:	200W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Max. drain-gate voltage:	100V

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• Parameters

Open channel resistance:	25mOhm
Max. drain current:	56A
Max. power loss:	200W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Max. drain-gate voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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