HUF75652G3

Symbol Micros: THUF75652g3

109462

THUF75652g3

Contractor Symbol:

Case : TO247

Datasheet

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Transistor N-MOSFET 75A 100V 515W

Parameters

Open channel resistance:	8mOhm
Max. drain current:	75A
Max. power loss:	515W
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Max. drain-gate voltage:	100V

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: HUF75652G3 Case style: TO247  

External warehouse:

660 pcs.

Quantity of pcs.	450+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	4,5784

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Packaging:
450

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ON-Semicoductor Manufacturer part number: HUF75652G3 Case style: TO247  

External warehouse:

90 pcs.

Quantity of pcs.	90+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	5,2378

Add to comparison tool Add inquiry (RFQ)

Packaging:
30

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	8mOhm
Max. drain current:	75A
Max. power loss:	515W
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Max. drain-gate voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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