HYG023N04LS1B HUAYI

Symbol Micros: THYG023n04ls1b

401284

THYG023n04ls1b

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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Transistor N-Channel MOSFET; 40V; 20V; 170A; 3,5mOhm; 150W; -55°C ~ 175°C;

Parameters

Open channel resistance:	3,5mOhm
Max. drain current:	170A
Max. power loss:	150W
Case:	TO263 (D2PAK)
Manufacturer:	HUAYI
Max. drain-source voltage:	40V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: HUAYI Manufacturer part number: HYG023N04LS1B RoHS Case style: TO263t/r (D2PAK) Datasheet

In stock:

50 pcs.

Quantity of pcs.	1+	5+	20+	100+	500+
Net price (EUR)	0,9813	0,6526	0,5399	0,4860	0,4672

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	3,5mOhm
Max. drain current:	170A
Max. power loss:	150W
Case:	TO263 (D2PAK)
Manufacturer:	HUAYI
Max. drain-source voltage:	40V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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