HYG053N10NS1B HUAYI

Symbol Micros: THYG053n10ns1b

401385

THYG053n10ns1b

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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Transistor N-Channel MOSFET; 100V; 20V; 120A; 5,5mOhm; 187,5W; -55°C ~ 175°C;

Parameters

Open channel resistance:	5,5mOhm
Max. drain current:	120A
Max. power loss:	187,5W
Case:	TO263 (D2PAK)
Manufacturer:	HUAYI
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: HUAYI Manufacturer part number: HYG053N10NS1B RoHS Case style: TO263t/r (D2PAK) Datasheet

In stock:

50 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,8099	0,5094	0,4226	0,3756	0,3521

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	5,5mOhm
Max. drain current:	120A
Max. power loss:	187,5W
Case:	TO263 (D2PAK)
Manufacturer:	HUAYI
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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