HYG053N10NS1P HUAYI

Symbol Micros: THYG053n10ns1p

401388

THYG053n10ns1p

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Case : TO220

Datasheet

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Transistor N-Channel MOSFET; 100V; 20V; 120A; 5,5mOhm; 187,5W; -55°C ~ 175°C;

Parameters

Open channel resistance:	5,5mOhm
Max. drain current:	120A
Max. power loss:	187,5W
Case:	TO220
Manufacturer:	HUAYI
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	5,5mOhm
Max. drain current:	120A
Max. power loss:	187,5W
Case:	TO220
Manufacturer:	HUAYI
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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