HYG053N10NS1P HUAYI

Symbol Micros: THYG053n10ns1p
Contractor Symbol:
Case : TO220
Transistor N-Channel MOSFET; 100V; 20V; 120A; 5,5mOhm; 187,5W; -55°C ~ 175°C;
Parameters
Open channel resistance: 5,5mOhm
Max. drain current: 120A
Max. power loss: 187,5W
Case: TO220
Manufacturer: HUAYI
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: HUAYI Manufacturer part number: HYG053N10NS1P RoHS Case style: TO220 Datasheet
In stock:
100 pcs.
Quantity of pcs. 2+ 10+ 50+ 100+ 400+
Net price (EUR) 0,9175 0,5755 0,4505 0,4245 0,3986
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Packaging:
50/100
Open channel resistance: 5,5mOhm
Max. drain current: 120A
Max. power loss: 187,5W
Case: TO220
Manufacturer: HUAYI
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT