HYG053N10NS1P HUAYI

Symbol Micros: THYG053n10ns1p
Contractor Symbol:
Case : TO220
Transistor N-Channel MOSFET; 100V; 20V; 120A; 5,5mOhm; 187,5W; -55°C ~ 175°C;
Parameters
Open channel resistance: 5,5mOhm
Max. drain current: 120A
Max. power loss: 187,5W
Case: TO220
Manufacturer: HUAYI
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 5,5mOhm
Max. drain current: 120A
Max. power loss: 187,5W
Case: TO220
Manufacturer: HUAYI
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT