HYG065N07NS1P HUAYI

Symbol Micros: THYG065n07ns1p
Contractor Symbol:
Case : TO220
Technical drawing Add to favourites
Transistor N-Channel MOSFET; 70V; 20V; 100A; 6,5Ohm; 125W; -55°C ~ 175°C; Similar to: IRF3205PBF;
Parameters
Open channel resistance: 6,5mOhm
Max. drain current: 100A
Max. power loss: 125W
Case: TO220
Manufacturer: HUAYI
Max. drain-source voltage: 70V
Transistor type: N-MOSFET
Manufacturer:: HUAYI Manufacturer part number: HYG065N07NS1P RoHS Case style: TO220 Datasheet
In stock:
75 pcs.
Quantity of pcs. 2+ 5+ 20+ 100+ 400+
Net price (EUR) 0,8164 0,6077 0,4499 0,3781 0,3549
Add to comparison tool
Packaging:
20/100
Open channel resistance: 6,5mOhm
Max. drain current: 100A
Max. power loss: 125W
Case: TO220
Manufacturer: HUAYI
Max. drain-source voltage: 70V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols