HYG065N07NS1P HUAYI

Symbol Micros: THYG065n07ns1p

401421

THYG065n07ns1p

Contractor Symbol:

Case : TO220

Datasheet

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Transistor N-Channel MOSFET; 70V; 20V; 100A; 6,5mOhm; 125W; -55°C ~ 175°C; Similar to: IRF3205PBF;

Parameters

Open channel resistance:	6,5mOhm
Max. drain current:	100A
Max. power loss:	125W
Case:	TO220
Manufacturer:	HUAYI
Max. drain-source voltage:	70V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: HUAYI Manufacturer part number: HYG065N07NS1P RoHS Case style: TO220 Datasheet

In stock:

50 pcs.

Quantity of pcs.	2+	10+	50+	100+	400+
Net price (EUR)	0,7335	0,4601	0,3599	0,3394	0,3189

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Packaging:
50/100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	6,5mOhm
Max. drain current:	100A
Max. power loss:	125W
Case:	TO220
Manufacturer:	HUAYI
Max. drain-source voltage:	70V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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