HYG101N10LA1D HUAYI

Symbol Micros: THYG101n10la1d

401460

THYG101n10la1d

Contractor Symbol:

Case : TO252 (DPACK)

Datasheet

Technical drawing Add to favourites

Transistor N-Channel MOSFET; 100V; 20V; 15A; 125mOhm; 51,7W; -55°C ~ 175°C; Similar to: IRLR120PBF; IRLR120TRLPBF; IRLR120TRPBF; IRLR120TRRPBF; IRLR120NPBF; IRLR120NTRLPBF; IRLR120NTRPBF;

Parameters

Open channel resistance:	125mOhm
Max. drain current:	15A
Max. power loss:	51,7W
Case:	TO252 (DPACK)
Manufacturer:	HUAYI
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: HUAYI Manufacturer part number: HYG101N10LA1D RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

200 pcs.

Quantity of pcs.	3+	10+	50+	200+	1000+
Net price (EUR)	0,4251	0,2795	0,2001	0,1750	0,1639

Add to comparison tool Add inquiry (RFQ)

Packaging:
200 Quantity (multiple: 1)

- +

• Parameters

Open channel resistance:	125mOhm
Max. drain current:	15A
Max. power loss:	51,7W
Case:	TO252 (DPACK)
Manufacturer:	HUAYI
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.