HYG101N10LA1D HUAYI

Symbol Micros: THYG101n10la1d

401460

THYG101n10la1d

Contractor Symbol:

Case : TO252 (DPAK)

Datasheet

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Transistor N-Channel MOSFET; 100V; 20V; 15A; 125mOhm; 51,7W; -55°C ~ 175°C; Similar to: IRLR120PBF; IRLR120TRLPBF; IRLR120TRPBF; IRLR120TRRPBF; IRLR120NPBF; IRLR120NTRLPBF; IRLR120NTRPBF;

Parameters

Open channel resistance:	125mOhm
Max. drain current:	15A
Max. power loss:	51,7W
Case:	TO252 (DPAK)
Manufacturer:	HUAYI
Max. drain-source voltage:	100V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: HUAYI Manufacturer part number: HYG101N10LA1D RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

200 pcs.

Quantity of pcs.	3+	10+	50+	200+	1000+
Net price (EUR)	0,4148	0,2727	0,1953	0,1707	0,1600

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Packaging:
200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	125mOhm
Max. drain current:	15A
Max. power loss:	51,7W
Case:	TO252 (DPAK)
Manufacturer:	HUAYI
Max. drain-source voltage:	100V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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