HYG170C03LR1S HUAYI

Symbol Micros: THYG170c03lr1s

401477

THYG170c03lr1s

Contractor Symbol:

Case : SOP08

Datasheet

Technical drawing Add to favourites

Transistor N/P-Channel MOSFET; 30V; 20V; 9.5A/8A; 19,3mOhm/40mOhm; 3W; -55°C ~ 175°C; Similar to: IRF7319PBF; IRF7319TRPBF;

Parameters

Open channel resistance:	19,3mOhm
Max. drain current:	9,5A
Max. power loss:	3W
Case:	SOP08
Manufacturer:	HUAYI
Max. drain-source voltage:	30V
Transistor type:	N/P-MOSFET

All parameters

Manufacturer:: HUAYI Manufacturer part number: HYG170C03LR1S RoHS Case style: SOP08t/r Datasheet

In stock:

180 pcs.

Quantity of pcs.	3+	10+	50+	200+	1000+
Net price (EUR)	0,4155	0,2723	0,1948	0,1704	0,1596

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Packaging:
200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	19,3mOhm
Max. drain current:	9,5A
Max. power loss:	3W
Case:	SOP08
Manufacturer:	HUAYI
Max. drain-source voltage:	30V
Transistor type:	N/P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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