HYG180N10LS1D HUAYI

Symbol Micros: THYG180n10ls1d

401486

THYG180n10ls1d

Contractor Symbol:

Case : TO252 (DPACK)

Datasheet

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Transistor N-Channel MOSFET; 100V; 20V; 45A; 30mOhm; 71,4W; -55°C ~ 175°C;

Parameters

Open channel resistance:	30mOhm
Max. drain current:	45A
Max. power loss:	71,4W
Case:	TO252 (DPACK)
Manufacturer:	HUAYI
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: HUAYI Manufacturer part number: HYG180N10LS1D RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

85 pcs.

Quantity of pcs.	2+	15+	100+	300+	1000+
Net price (EUR)	0,4486	0,2490	0,1966	0,1853	0,1794

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	30mOhm
Max. drain current:	45A
Max. power loss:	71,4W
Case:	TO252 (DPACK)
Manufacturer:	HUAYI
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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