HYG180N10LS1P HUAYI

Symbol Micros: THYG180n10ls1p

401487

THYG180n10ls1p

Contractor Symbol:

Case : TO220

Datasheet

Technical drawing Add to favourites

Transistor N-Channel MOSFET; 100V; 20V; 50A; 34mOhm; 93,7W; -55°C ~ 175°C; Similar to: IRF540PBF; IRF540NPBF;

Parameters

Open channel resistance:	34mOhm
Max. drain current:	50A
Max. power loss:	93,7W
Case:	TO220
Manufacturer:	HUAYI
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: HUAYI Manufacturer part number: HYG180N10LS1P RoHS Case style: TO220 Datasheet

In stock:

30 pcs.

Quantity of pcs.	2+	10+	50+	100+	400+
Net price (EUR)	0,6436	0,4040	0,3171	0,2983	0,2795

Add to comparison tool Add inquiry (RFQ)

Packaging:
50/100 Quantity (multiple: 1)

- +

• Parameters

Open channel resistance:	34mOhm
Max. drain current:	50A
Max. power loss:	93,7W
Case:	TO220
Manufacturer:	HUAYI
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.