HYG180N10LS1S HUAYI

Symbol Micros: THYG180n10ls1s
Contractor Symbol:
Case : SOP08
Transistor N-Channel MOSFET; 100V; 20V; 9A; 26mOhm; 4,6W; -55°C ~ 150°C;
Parameters
Open channel resistance: 26mOhm
Max. drain current: 9A
Max. power loss: 4,6W
Case: SOP08
Manufacturer: HUAYI
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: HUAYI Manufacturer part number: HYG180N10LS1S RoHS Case style: SOP08t/r Datasheet
In stock:
200 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,4576 0,2783 0,2132 0,1925 0,1830
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Packaging:
200
Open channel resistance: 26mOhm
Max. drain current: 9A
Max. power loss: 4,6W
Case: SOP08
Manufacturer: HUAYI
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD