HYG180N10LS1S HUAYI

Symbol Micros: THYG180n10ls1s

401488

THYG180n10ls1s

Contractor Symbol:

Case : SOP08

Datasheet

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Transistor N-Channel MOSFET; 100V; 20V; 9A; 26mOhm; 4,6W; -55°C ~ 150°C;

Parameters

Open channel resistance:	26mOhm
Max. drain current:	9A
Max. power loss:	4,6W
Case:	SOP08
Manufacturer:	HUAYI
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: HUAYI Manufacturer part number: HYG180N10LS1S RoHS Case style: SOP08t/r Datasheet

In stock:

200 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,4576	0,2783	0,2132	0,1925	0,1830

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Packaging:
200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	26mOhm
Max. drain current:	9A
Max. power loss:	4,6W
Case:	SOP08
Manufacturer:	HUAYI
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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