HYG180N10LS1S HUAYI
Symbol Micros:
THYG180n10ls1s
Case : SOP08
Transistor N-Channel MOSFET; 100V; 20V; 9A; 26mOhm; 4,6W; -55°C ~ 150°C;
Parameters
Open channel resistance: | 26mOhm |
Max. drain current: | 9A |
Max. power loss: | 4,6W |
Case: | SOP08 |
Manufacturer: | HUAYI |
Max. drain-source voltage: | 100V |
Transistor type: | N-MOSFET |
Open channel resistance: | 26mOhm |
Max. drain current: | 9A |
Max. power loss: | 4,6W |
Case: | SOP08 |
Manufacturer: | HUAYI |
Max. drain-source voltage: | 100V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
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