HYG210P06LQ1D HUAYI

Symbol Micros: THYG210p06lq1d

401505

THYG210p06lq1d

Contractor Symbol:

Case : TO252 (DPACK)

Datasheet

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Transistor P-Channel MOSFET; 60V; 20V; 40A; 32mOhm; 60W; -55°C ~ 175°C;

Parameters

Open channel resistance:	32mOhm
Max. drain current:	40A
Max. power loss:	60W
Case:	TO252 (DPACK)
Manufacturer:	HUAYI
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: HUAYI Manufacturer part number: HYG210P06LQ1D RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

150 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,5000	0,3028	0,2326	0,2099	0,1998

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Packaging:
200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	32mOhm
Max. drain current:	40A
Max. power loss:	60W
Case:	TO252 (DPACK)
Manufacturer:	HUAYI
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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