HYG210P06LQ1P HUAYI

Symbol Micros: THYG210p06lq1p

401795

THYG210p06lq1p

Contractor Symbol:

Case : TO220

Datasheet

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Transistor P-Channel MOSFET; 60V; 20V; 45A; 34mOhm; 107W; -55°C ~ 175°C; Similar to: IRF4905PBF;

Parameters

Open channel resistance:	34mOhm
Max. drain current:	45A
Max. power loss:	107W
Case:	TO220
Manufacturer:	HUAYI
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: HUAYI Manufacturer part number: HYG210P06LQ1P RoHS Case style: TO220 Datasheet

In stock:

80 pcs.

Quantity of pcs.	1+	5+	20+	100+	500+
Net price (EUR)	0,9907	0,6597	0,5446	0,4930	0,4719

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Packaging:
20/100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	34mOhm
Max. drain current:	45A
Max. power loss:	107W
Case:	TO220
Manufacturer:	HUAYI
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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