HYG350N06LA1D HUAYI

Symbol Micros: THYG350n06la1d

401511

THYG350n06la1d

Contractor Symbol:

Case : TO252 (DPACK)

Datasheet

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Transistor N-Channel MOSFET; 60V; 20V; 26A; 44mOhm; 42,8W; -55°C ~ 175°C; Similar to: IRLR024PBF; IRLR024TRLPBF; IRLR024TRPBF; IRLR024NPBF; IRLR024NTRLPBF; IRLR024NTRPBF; IRLR024NTRRPBF;

Parameters

Open channel resistance:	44mOhm
Max. drain current:	26A
Max. power loss:	42,8W
Case:	TO252 (DPACK)
Manufacturer:	HUAYI
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	44mOhm
Max. drain current:	26A
Max. power loss:	42,8W
Case:	TO252 (DPACK)
Manufacturer:	HUAYI
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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