HYG450P06LA1D HUAYI

Symbol Micros: THYG450p06la1d
Contractor Symbol:
Case : TO252 (DPACK)
Transistor P-Channel MOSFET; 60V; 20V; 20A; 62mOhm; 37,5W; -55°C ~ 175°C; Similar to: IRFR5305PBF; IRFR5305TRLPBF; IRFR5305TRPBF; IRFR5305TRRPBF; IRFR9024NPBF; IRFR9024NTRLPBF; IRFR9024NTRPBF; IRFR9024NTRRPBF;
Parameters
Open channel resistance: 62mOhm
Max. drain current: 20A
Max. power loss: 37,5W
Case: TO252 (DPACK)
Manufacturer: HUAYI
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Manufacturer:: HUAYI Manufacturer part number: HYG450P06LA1D RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
248 pcs.
Quantity of pcs. 2+ 10+ 50+ 300+ 1200+
Net price (EUR) 0,5325 0,3241 0,2477 0,2206 0,2130
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Packaging:
300
Open channel resistance: 62mOhm
Max. drain current: 20A
Max. power loss: 37,5W
Case: TO252 (DPACK)
Manufacturer: HUAYI
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD