IAUA210N10S5N024AUMA1 Infineon Technologies

Symbol Micros: TIAUA210N10S5N024AUMA1

392327

TIAUA210N10S5N024AUMA1

Contractor Symbol:

Case : PG-HSOF-5-4

Datasheet

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MOSFET_(75V 120V( PG-HSOF-5 transistors - fets, mosfets - single

Parameters

Open channel resistance:	2,4mOhm
Max. drain current:	210A
Max. power loss:	238W
Case:	PG-HSOF-5
Manufacturer:	INFINEON
Max. drain-source voltage:	100V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	2,4mOhm
Max. drain current:	210A
Max. power loss:	238W
Case:	PG-HSOF-5
Manufacturer:	INFINEON
Max. drain-source voltage:	100V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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