IGB10N60TATMA1 Infineon Technologies

Symbol Micros: TIGB10n60t
Contractor Symbol:
Case : TO263 (D2PAK)
IGBT 600V 20A 110W TO263-3 TrenchStop -40+175°C
Parameters
Gate charge: 62nC
Max. dissipated power: 110W
Max collector current (impulse): 30A
Max. collector current: 24A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO263 (D2PAK)
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IGB10N60TATMA1 RoHS Case style: TO263 (D2PAK) Datasheet
In stock:
27 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 500+
Net price (EUR) 0,9176 0,6102 0,5039 0,4554 0,4369
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Packaging:
100
Manufacturer:: Infineon Manufacturer part number: IGB10N60TATMA1 Case style: TO263 (D2PAK)  
External warehouse:
1455 pcs.
Quantity of pcs. 5+ (Please wait for the order confirmation)
Net price (EUR) 1,1155
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Packaging:
5
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Gate charge: 62nC
Max. dissipated power: 110W
Max collector current (impulse): 30A
Max. collector current: 24A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO263 (D2PAK)
Manufacturer: Infineon Technologies
Collector-emitter voltage: 600V
Operating temperature (range): -40°C ~ 175°C
Gate-emitter voltage: 20V