IGB10N60TATMA1 Infineon Technologies

Symbol Micros: TIGB10n60t

231963

TIGB10n60t

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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IGBT 600V 20A 110W TO263-3 TrenchStop -40+175°C

Parameters

Gate charge:	62nC
Max. dissipated power:	110W
Max collector current (impulse):	30A
Max. collector current:	24A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO263 (D2PAK)
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IGB10N60TATMA1 RoHS Case style: TO263 (D2PAK) Datasheet

In stock:

27 pcs.

Quantity of pcs.	1+	5+	20+	100+	400+
Net price (EUR)	1,4349	1,0040	0,8548	0,7814	0,7553

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Packaging:
100 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IGB10N60TATMA1 Case style: TO263 (D2PAK)  

External warehouse:

1495 pcs.

Quantity of pcs.	5+ (Please wait for the order confirmation)
Net price (EUR)	0,7553

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Packaging:
5

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Gate charge:	62nC
Max. dissipated power:	110W
Max collector current (impulse):	30A
Max. collector current:	24A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO263 (D2PAK)
Manufacturer:	Infineon Technologies
Operating temperature (range):	-40°C ~ 175°C
Collector-emitter voltage:	600V
Gate-emitter voltage:	20V

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