IGD06N60TATMA1 Infineon Technologies

Symbol Micros: TIGD06n60t

231978

TIGD06n60t

Contractor Symbol:

Case : TO252/3 (DPAK)

Datasheet

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IGBT 600V 12A 88W TO252-3 TrenchStop -40+175°C

Parameters

Gate charge:	42nC
Max. dissipated power:	88W
Max. collector current:	12A
Max collector current (impulse):	18A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO252/3 (DPAK)
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IGD06N60TATMA1 RoHS Case style: TO252/3 (DPAK) Datasheet

In stock:

80 pcs.

Quantity of pcs.	1+	5+	20+	100+	500+
Net price (EUR)	1,1047	0,7357	0,6088	0,5500	0,5265

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Packaging:
500 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IGD06N60T Case style: TO252/3 (DPAK)  

External warehouse:

2500 pcs.

Quantity of pcs.	1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,5265

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Packaging:
1

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Gate charge:	42nC
Max. dissipated power:	88W
Max. collector current:	12A
Max collector current (impulse):	18A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO252/3 (DPAK)
Manufacturer:	Infineon Technologies
Operating temperature (range):	-40°C ~ 175°C
Collector-emitter voltage:	600V
Gate-emitter voltage:	20V
Mounting:	SMD

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