IGD06N60TATMA1 Infineon Technologies

Symbol Micros: TIGD06n60t
Contractor Symbol:
Case : TO252/3 (DPAK)
IGBT 600V 12A 88W TO252-3 TrenchStop -40+175°C
Parameters
Gate charge: 42nC
Max. dissipated power: 88W
Max. collector current: 12A
Max collector current (impulse): 18A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO252/3 (DPAK)
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IGD06N60TATMA1 RoHS Case style: TO252/3 (DPAK) Datasheet
In stock:
80 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 500+
Net price (EUR) 1,1047 0,7357 0,6088 0,5500 0,5265
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Packaging:
500
Manufacturer:: Infineon Manufacturer part number: IGD06N60T Case style: TO252/3 (DPAK)  
External warehouse:
2500 pcs.
Quantity of pcs. 1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,5265
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Packaging:
1
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Gate charge: 42nC
Max. dissipated power: 88W
Max. collector current: 12A
Max collector current (impulse): 18A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO252/3 (DPAK)
Manufacturer: Infineon Technologies
Operating temperature (range): -40°C ~ 175°C
Collector-emitter voltage: 600V
Gate-emitter voltage: 20V
Mounting: SMD