IGD06N60TATMA1 Infineon Technologies

Symbol Micros: TIGD06n60t

231978

TIGD06n60t

Contractor Symbol:

Case : TO252/3 (DPAK)

Datasheet

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IGBT 600V 12A 88W TO252-3 TrenchStop -40+175°C

Parameters

Gate charge:	42nC
Max. dissipated power:	88W
Max collector current (impulse):	18A
Max. collector current:	12A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO252/3 (DPAK)
Manufacturer:	Infineon Technologies

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• Parameters

Gate charge:	42nC
Max. dissipated power:	88W
Max collector current (impulse):	18A
Max. collector current:	12A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO252/3 (DPAK)
Manufacturer:	Infineon Technologies
Operating temperature (range):	-40°C ~ 175°C
Collector-emitter voltage:	600V
Gate-emitter voltage:	20V
Mounting:	SMD

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