IGP30N60H3

Symbol Micros: TIGP30n60h3
Contractor Symbol:
Case : TO220
Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C; IGP30N60H3XKSA1
Parameters
Gate charge: 165nC
Max. dissipated power: 187W
Max. collector current: 60A
Max collector current (impulse): 120A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO220
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IGP30N60H3 RoHS Case style: TO220 Datasheet
In stock:
8 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 2,9641 2,4642 2,1699 1,9830 1,9130
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Packaging:
50
         
 
Item in delivery
Estimated date:
2026-12-20
Quantity of pcs.: 50
Gate charge: 165nC
Max. dissipated power: 187W
Max. collector current: 60A
Max collector current (impulse): 120A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO220
Manufacturer: Infineon Technologies
Operating temperature (range): -40°C ~ 175°C
Collector-emitter voltage: 600V
Gate-emitter voltage: 20V
Mounting: THT